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- Manufacturer No：71V016SA20BFGI8
- Manufacturer：
- Category：Memory
- Datasheet：
Get the PDF file - SKU：11006008
- Description：Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.6V 1Mb 120mA
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- Manufacturer No：71V016SA20BFGI8
- Manufacturer：Integrated Device Technology (IDT)
- Category：Memory
- Datasheet：71V016SA20BFGI8
- SKU：11006008
- Description：Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.6V 1Mb 120mA
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User Guide
71V016SA20BFGI8 Details
Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.6V 1Mb 120mA
71V016SA20BFGI8 Specification Parameters
- Part Status: Active
- Number of Functions: 1
- RoHS Status: RoHS Compliant
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Operating Supply Voltage: 3.3V
- Min Operating Temperature: -40°C
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Min Supply Voltage: 3V
- Temperature Grade: INDUSTRIAL
- Number of Pins: 48
- Max Supply Voltage: 3.6V
- Length: 7mm
- Interface: Parallel
- JESD-609 Code: e1
- Output Characteristics: 3-STATE
- Nominal Supply Current: 120mA
- Address Bus Width: 16b
- Sync/Async: Asynchronous
- Memory Size: 128kB
- Terminal Pitch: 0.75mm
- Memory Type: RAM, SDR, SRAM - Asynchronous
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Supply Voltage: 3.3V
- Moisture Sensitivity Level (MSL): 3
- Technology: CMOS
- Max Operating Temperature: 85°C
- Time@Peak Reflow Temperature-Max (s): 30
- Standby Voltage-Min: 3V
- Number of Terminations: 48
- Pin Count: 48
- Terminal Position: BOTTOM
- Width: 7mm
- Terminal Form: BALL
- Thickness: 1.4mm
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Word Size: 16b
- I/O Type: COMMON
- Access Time: 20 ns
- Subcategory: SRAMs
- Density: 1 Mb
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Integrated Device Technology (IDT) — Manufacturer Introduction
We are a world-wide leader in the designdevelopmentand marketing of silicon timing devices to the communications equipmentconsumerand business electronics industries.
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